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CHENMKO ENTERPRISE CO.,LTD
SURFACE MOUNT PNP Muti-Chip General Purpose Amplifier
VOLTAGE 45 Volts
APPLICATION
* AF input stages and driver applicationon equipment. * Other general purpose applications.
CHT807PT
CURRENT 0.5 Ampere
FEATURE
* Surface mount package. (SOT-23) * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. * High saturation current capability.
.110 (2.80) .082 (2.10) .119 (3.04)
SOT-23
.041 (1.05) .033 (0.85)
(1)
.066 (1.70)
CONSTRUCTION
* PNP Silicon Transistor * Epitaxial planner type
(3)
(2)
MARKING
* HFE(Q):J4 * HFE(R):J5 * HFE(S):J6
(3)C
.055 (1.40) .047 (1.20)
.103 (2.64) .086 (2.20)
.028 (0.70) .020 (0.50)
.007 (0.177)
.018 (0.30) .002 (0.05)
CIRCUIT
.045 (1.15) .033 (0.85)
.019 (0.50)
(1)B
(2)E
Dimensions in inches and (millimeters)
SOT-23
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VCES VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. PARAMETER collector-base voltage collector-emitter voltage collector-base voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb 25 C; note 1 - -65 - -65 open collector CONDITIONS open emitter open base - - - - - - MIN. MAX. -45 -45 -50 -5 -500 -1000 -200 310 +150 150 +150 UNIT V V V V mA mA mA mW C C C
2004-10
RATING CHARACTERISTIC ( CH807PT )
THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Device mounted on ceramic substrate 0.7mm ; 2.5cm ares. CHARACTERISTICS Tamb = 25 C unless otherwise specied. SYMBOL ICBO IEBO VCEsat hFE VBE CCBO fT PARAMETER collector-base cut-off current emitter-base cut-off current collector-emitter saturation volt DC current gainI base-emitter voltage collector-base capacitance transition frequency CONDITIONS VCB = -20 V VCB = -25 V; Tj = 150 OC VEB = - 4 V IC =- 500 mA ; I B = -50 mA IC = -100 mA; VCE= -1.0V IC = -300 mA; VCE= -1.0V IC = -300 mA; VCE= -1.0V VCB = 10V ; f = 1 MHz IC = 10 mA; VCE = 5 V ; f = 50 MHz - 80 - - - - 100 60 MIN. MAX. -100 -50 -100 -700 600 - -1.2 12(typ.) - V pF MHz UNIT nA uA nA mV
2
PARAMETER thermal resistance from junction to ambient
CONDITIONS note 1
VALUE 430
UNIT
C/W
Note : 1. Pulse test: tp 300uSec; 0.02. 2. hFE: Classification Q: 100 to 250, R: 160 to 400, S: 250 to 600
RATING CHARACTERISTIC CURVES ( CH807PT )
Total power dissipation Ptot = f (TS ) Collector cutoff current ICBO = f (TA) VCB = 25V
400
mW
5
10
V CBO
nA 10
4
300
P tot
250
10
200
3
max
150
10
2
typ
100
10
50
1
0 0
20
40
60
80
100
120 OC
150
10 0
0
50
100
oC
150
TS
TA
Permissible Pulse Load R thJS = f (t p )
Permissible Pulse Load
Ptotmax / PtotDC = f (t p )
10 3
K/W
10 3
Ptotmax / PtotDC
10 2
10 2
10 1
D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5
R thJS
10
0
D=0.5 0.2 0.1 0.05 0.02 0.01 0.005 0
10 1
10 -1 -6 10
10
-5
10
-4
10
-3
10
-2
s
10
0
10 0 -6 10
10
-5
10
-4
10
-3
10
-2
s
10
0
tp
tp
RATING CHARACTERISTIC CURVES ( CH807PT )
Collector-emitter saturation voltage IC = f (VCEsat ), h FE = 10
10 3
Base-emitter saturation voltage IC = f (VBEsat ), h FE = 10
10 3
C
mA 150 oC 25 oC -50 oC
C
mA 150 oC 25 oC -50 oC
10 2 5
10 2 5
10 1 5
10 1 5
10 0 5
10 0 5
10 -1
0
0.2
0.4
0.6
V
0.8
10 -1
0
1.0
2.0
3.0
V
4.0
VCEsat
V BEsat
DC current gain hFE = f (IC ) VCE = 5V
10 3 h FE 5 100 oC 25 oC -50 oC 10 5
2
Transition frequency fT = f (IC) VCE = 5V
10 3 fT MHz 5
10 2
10 1 5
5
10 0 10 -1
10 0
10 1
10 2
mA 10 3
10 1 10 0
10 1
3
10 2
mA
10
C
C

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